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spu04n60c3.pdf Principales características:

spu04n60c3spu04n60c3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPU04N60C3 FEATURES With To-251(IPAK) package New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous@T =25 C 4.5 I A D 2.8 T =125 C I Drain Current-Single Pulsed 13.5 A DM P Total Dissipation @T =25 50 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 2.5 /W R

 

Keywords - ALL TRANSISTORS. Principales características

 spu04n60c3.pdf Design, MOSFET, Power

 spu04n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spu04n60c3.pdf Database, Innovation, IC, Electricity

 

 
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