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spw15n60c3.pdf Principales características:

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isc N-Channel MOSFET Transistor SPW15N60C3 ISPW15N60C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 15 A D I Drain Current-Single Pulsed 45 A DM P Total Dissipation @T =25 156 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 0.8 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N

 

Keywords - ALL TRANSISTORS. Principales características

 spw15n60c3.pdf Design, MOSFET, Power

 spw15n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spw15n60c3.pdf Database, Innovation, IC, Electricity

 

 
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