std15nf10t4.pdf datasheet:

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD15NF10T4 FEATURES With To-252(DPAK) package Application oriented characterization Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GSS Drain Current-Continuous@T =25 C 23 I A D 16 T =175 T =125 J C I Drain Current-Single Pulsed 92 A DM P Total Dissipation @T =25 70 W D C T Max. Operating Junction Temperature 175 ch Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 2.14 /W Rth(ch-a) Channel-to-ambient thermal re