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std18n65m5.pdf Principales características:

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD18N65M5 FEATURES Higher V rating DSS Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 25 V GSS Drain Current-Continuous@T =25 C 15 I A D 9.4 T =175 T =125 J C I Drain Current-Single Pulsed 60 A DM P Total Dissipation @T =25 110 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.14 /W Rth(ch-a) Channel-to-ambient thermal resistance 50 1 isc website www.iscsemi.cn

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 std18n65m5.pdf Design, MOSFET, Power

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