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tip121.pdf Principales características:

isc Silicon NPN Darlington Power Transistor TIP121 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 5 A C I Collector Current-Peak 8 A CM I Base Current 120 mA B Collector Power Dissipation 65 T =25 C P W C Collector Power Dissipation 2 T =25 a T Junction Tempera

Keywords - ALL TRANSISTORS. Principales características

 tip121.pdf Design, MOSFET, Power

 tip121.pdf RoHS Compliant, Service, Triacs, Semiconductor

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