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tip54.pdf Principales características:

isc Silicon NPN Power Transistors TIP54 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 3.0 A C I Collector Current-Peak 5.0 A CM I Base Current 0.6 A B Collector Power Dissipation P 100 W D T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.25 /W th j-c

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