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spb04n60s5.pdf Principales características:

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SPB04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB04N60S5 PG-TO263 Q67040-S4201 04N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current ID TC = 25 C 4.5 TC = 100 C 2.8 9 Pulsed drain current, tp limited by Tjmax ID puls 130 mJ Avalanche energy, single pulse EAS ID = 3.4 A, VDD = 50 V EAR 0.4 Avalanche energy, repetitive tAR limited by Tjmax1) ID = 4.5 A, VDD = 50 V 4.5 A Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS V 20 VGS Gate source voltage AC (f >1Hz) 30 Power dissipation, TC = 25 C Ptot 50 W C Operating and

 

Keywords - ALL TRANSISTORS. Principales características

 spb04n60s5.pdf Design, MOSFET, Power

 spb04n60s5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spb04n60s5.pdf Database, Innovation, IC, Electricity

 

 
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