Todos los transistores

 

spd04n80c3.pdf Principales características:

spd04n80c3spd04n80c3

SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 W DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) PG-TO252-3 Ultra low gate charge Ultra low effective capacitances CoolMOSTM 800V designed for Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) aswd Type Package Marking SPD04N80C3 PG-TO252-3 04N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 4 A D C T =100 C 2.5 C I T =25 C 12 Pulsed drain current2) D,pulse C E I =0.8 A, V =50 V

 

Keywords - ALL TRANSISTORS. Principales características

 spd04n80c3.pdf Design, MOSFET, Power

 spd04n80c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd04n80c3.pdf Database, Innovation, IC, Electricity

 

 

 


 
↑ Back to Top
.