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spd07n60s5 spu07n60s5.pdf Principales características:

spd07n60s5_spu07n60s5spd07n60s5_spu07n60s5

SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252 PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated 2 3 Extreme dv/dt rated 3 1 2 1 Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 07N60S5 SPU07N60S5 PG-TO251 Q67040-S4196 SPD07N60S5 PG-TO252 Q67040-S4186 07N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current ID TC = 25 C 7.3 TC = 100 C 4.6 14.6 Pulsed drain current, tp limited by Tjmax ID puls 230 mJ Avalanche energy, single pulse EAS ID = - A, VDD = 50 V EAR 0.5 Avalanche energy, repetitive tAR limited by Tjmax1) ID = 7.3 A, VDD = 50 V 7.3 A Avalanche current, repetitive tAR limited by Tjmax IAR Gate

 

Keywords - ALL TRANSISTORS. Principales características

 spd07n60s5 spu07n60s5.pdf Design, MOSFET, Power

 spd07n60s5 spu07n60s5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd07n60s5 spu07n60s5.pdf Database, Innovation, IC, Electricity

 

 
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