auirf3315s.pdf Principales características:
PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S Specifically designed for Automotive applications, D G this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve D2Pak low on-resistance per silicon area. This benefit AUIRF3315S combined with the fast switching speed and rugge- dized device design that HEXFET power MOSFETs GDS are well known for, provides the designer with an Gate Drain Source extremely efficient and reliable device for use in Automotive and a wide variety of other applicat
Keywords - ALL TRANSISTORS. Principales características
auirf3315s.pdf Design, MOSFET, Power
auirf3315s.pdf RoHS Compliant, Service, Triacs, Semiconductor
auirf3315s.pdf Database, Innovation, IC, Electricity
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