auirlr2905tr.pdf Principales características:
AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive D V(BR)DSS Low On-Resistance 55V Dynamic dV/dT Rating RDS(on) max. 27m 175 C Operating Temperature G Fast Switching ID 42A S Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified S S Description D G G Specifically designed for Automotive applications, D-Pak I-Pak this cellular design of HEXFET Power MOSFETs AUIRLRU2905 AUIRLU2905 utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit GDS combined with the fast switching speed and Gate Drain Source ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device f
Keywords - ALL TRANSISTORS. Principales características
auirlr2905tr.pdf Design, MOSFET, Power
auirlr2905tr.pdf RoHS Compliant, Service, Triacs, Semiconductor
auirlr2905tr.pdf Database, Innovation, IC, Electricity
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