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ircz24 ircz24pbf.pdf Principales características:

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications. TO-

Keywords - ALL TRANSISTORS. Principales características

 ircz24 ircz24pbf.pdf Design, MOSFET, Power

 ircz24 ircz24pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ircz24 ircz24pbf.pdf Database, Innovation, IC, Electricity