irf1503lpbf irf1503spbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf1503lpbf irf1503spbf.pdf Principales características:

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3m G l 175 C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and D2Pak TO-262 reliable device for use in a wide variety of applications. IRF1503SPbF IRF1503LPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain