irf1503pbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf1503pbf.pdf Principales características:

PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3m G 175 C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon limited) 240 ID @ TC = 100 C Continuous D