irf2807lpbf irf2807spbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf2807lpbf irf2807spbf.pdf Principales características:

PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175 C Operating Temperature l Fast Switching RDS(on) = 13m l Fully Avalanche Rated G l Lead-Free ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface