irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Principales características:

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB D2Pak TO-262 IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 89 A Continuous Drain Current