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irf3305pbf.pdf Principales características:

irf3305pbfirf3305pbf

PD - 95758A IRF3305PbF Features HEXFET Power MOSFET Designed to support Linear Gate Drive Applications D 175 C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and Design RDS(on) = 8.0m Fully Avalanche Rated G Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device. These features, coupled with 175 C junction operating temperature and "low thermal resistance of 0.45C/W" TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25 C 140 Continuous Drain Current, VGS @ 10V ID @ TC = 100 C 99 A Continuous Drain Current, VGS @ 10V (Package Limited) ID @ TC = 25 C 75 Pulsed Drain Current IDM 560 PD @TC

 

Keywords - ALL TRANSISTORS. Principales características

 irf3305pbf.pdf Design, MOSFET, Power

 irf3305pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3305pbf.pdf Database, Innovation, IC, Electricity

 

 
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