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irf3415s.pdf Principales características:

PD - 91509C IRF3415S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175 C Operating Temperature RDS(on) = 0.042 Fast Switching G Fully Avalanche Rated ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the Pak TO-262 highest power capability and the lowest possible on- D 2 resistance in any existing surface mo

Keywords - ALL TRANSISTORS. Principales características

 irf3415s.pdf Design, MOSFET, Power

 irf3415s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3415s.pdf Database, Innovation, IC, Electricity