irf540zpbf.pdf Principales características:
PD - 94758 IRF540Z AUTOMOTIVE MOSFET IRF540ZS IRF540ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5m G Description ID = 36A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety TO-220AB D2Pak TO-262 of other applications. IRF540Z IRF540ZS IRF540ZL Absolute Maximum Ratings Pa
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irf540zpbf.pdf Design, MOSFET, Power
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