irfp4332pbf.pdf Principales características:
PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 C and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for D D Reliable Operation l Short Fall & Rise Times for Fast Switching l175 C Operating Junction Temperature for S Improved Ruggedness D G G l Repetitive Avalanche Capability for Robustness and Reliability S TO-247AC GDS Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest p
Keywords - ALL TRANSISTORS. Principales características
irfp4332pbf.pdf Design, MOSFET, Power
irfp4332pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfp4332pbf.pdf Database, Innovation, IC, Electricity
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet