irfr120zpbf irfu120zpbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irfr120zpbf irfu120zpbf.pdf Principales características:

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 190m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make D-Pak I-Pak this design an extremely efficient and reliable device IRFR120ZPbF IRFU120ZPbF for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 8.7 ID @ TC = 100 C Continuous Dra