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irg7ph35u.pdf Principales características:

irg7ph35uirg7ph35u

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on) typ. = 1.9V Lead -Free n-channel Benefits High efficiency in a wide range of applications C C Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E C C G G Applications TO-247AC TO-247AD IRG7PH35UPbF IRG7PH35U-EP U.P.S Welding GC E Solar inverter Gate Collector Emitter Induction heating

 

Keywords - ALL TRANSISTORS. Principales características

 irg7ph35u.pdf Design, MOSFET, Power

 irg7ph35u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7ph35u.pdf Database, Innovation, IC, Electricity

 

 
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