irg7ph35ud1-ep.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irg7ph35ud1-ep.pdf Principales características:

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM E Positive VCE (ON) Temperature Co-Efficient VCE(on) typ. = 1.9V n-channel Tight Parameter Distribution Lead Free Package G G Benefits Device optimized for induction heating and soft switching E E applications C C G High Efficiency due to Low VCE(on), low switching losses G and Ultra-low VF Rugged transient performance for increased reliability TO-247AC TO-247AD Excellent current sharing in parallel operation IRG7PH35UD1PbF IRG7PH35U