irg7ph42ud1m.pdf datasheet:

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE(on) typ. = 1.7V @IC= 30A Positive VCE (ON) temperature co-efficient E Tight parameter distribution n-channel Lead free package Benefits G Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF E C Rugged transient performance for increased reliability G Excellent current sharing in parallel operation Low EMI TO-247AD G C E Gate Collector Emitter Bas