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irgp4760.pdf Principales características:

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100 C tSC 5.5 s, TJ(max) = 175 C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbF IRGP4760 EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4760PbF TO-247AC Tube 25 IR

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 irgp4760.pdf Design, MOSFET, Power

 irgp4760.pdf RoHS Compliant, Service, Triacs, Semiconductor

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