rt3nggm.pdf datasheet:
RT3NGGM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NGGM is composite transistor built with two 1.25 RT1N432 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit TERMINAL CONNECTOR EMITTER1 R1R2BASE1 COLLECTOR2 RTr2EMITTER2 RTr1BASE2 COLLECTOR1 R2 R1JEITASC-88 JEDEC MAXIMUM RATING(Ta=25)(RTr1, RTr2 COMMON) SYMBOL PARAMETER RATING UNITMARKING Collector to Base voltage 50 V V CBOEmitter to Base voltage 7 V V EBO6 5 4 Collector to Emitter voltage 50 V V CEOV
Keywords - ALL TRANSISTORS DATASHEET
rt3nggm.pdf Design, MOSFET, Power
rt3nggm.pdf RoHS Compliant, Service, Triacs, Semiconductor
rt3nggm.pdf Database, Innovation, IC, Electricity
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050