ixfr24n50 ixfr26n50.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixfr24n50 ixfr26n50.pdf Principales características:

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V G VGS Continuous 20 V D VGSM Transient 30 V Isolated back surface* ID25 TC = 25 C 26N50 26 A 24N50 24 A G = Gate D = Drain IDM TC = 25 C, Pulse width limited by TJM 26N50 104 A S = Source 24N50 96 A IAR TC = 25 C 26N50 26 A * Patent pending 24N50 24 A EAR TC = 25 C30 mJ dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS 5 V/ns TJ 150 C, RG = 2 W Features PD TC = 25 C 250 W Silicon chip on Direct-Copper-Bond substrate TJ -55 ... +150 C - High power dissi