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ixfr44n60.pdf Principales características:

ixfr44n60ixfr44n60

HiPerFETTM Power MOSFETs IXFR 44N60 VDSS = 600 V ISOPLUS247TM ID25 = 38 A (Electrically Isolated Back Surface) RDS(on)= 130 mW Single MOSFET Die trr 250 ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C38 A G = Gate D = Drain IDM TC = 25 C, Note 1 60 A S = Source IAR TC = 25 C44 A * Patent pending EAR TC = 25 C60 mJ EAS TC = 25 C3 J dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS 5 V/ns TJ 150 C, RG = 2 W Features PD TC = 25 C 400 W Silicon chip on Direct-Copper-Bond TJ -55 ... +150 C substrate TJM 150 C - High power dissipation Tstg -55 ... +150 C - Isolated mounting surface - 2500V electrical isolation TL 1.6 mm (0.063 in.) from case for 10 s 300 C Low drain to tab capaci

 

Keywords - ALL TRANSISTORS. Principales características

 ixfr44n60.pdf Design, MOSFET, Power

 ixfr44n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfr44n60.pdf Database, Innovation, IC, Electricity

 

 
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