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ixgh24n60b.pdf Principales características:

IXGH 24N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 48 A VCE(sat) = 2.3 V tfi = 80 ns Preliminary Data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G IC25 TC = 25 C48 A C E IC90 TC = 90 C24 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 96 A E = Emitter, TAB = Collector SSOA VGE = 15 V, TVJ = 125 C, RG = 22 ICM = 48 A (RBSOA) Clamped inductive load @ 0.8 VCES Features PC TC = 25 C 150 W TJ -55 ... +150 C International standard packages JEDEC TO-247 SMD surface TJM 150 C mountable and JEDEC TO-247 AD Tstg -55 ... +150 C High frequency IGBT Maximum lead temperature for soldering 300 C High current handling capability 1.6 mm (0.062 in.) from case for 10 s 3rd generation HDMOSTM process MO

Keywords - ALL TRANSISTORS. Principales características

 ixgh24n60b.pdf Design, MOSFET, Power

 ixgh24n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

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