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ixgk64n60b3d1.pdf Principales características:

VCES = 600V GenX3TM 600V IGBT IXGK64N60B3D1 IC110 = 64A with Diode IXGX64N60B3D1 VCE(sat) 1.8V Medium speed low Vsat PT tfi(typ) = 88ns IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC110 TC = 110 C64 A PLUS247 (IXGX) ICM TC = 25 C, 1ms 400 A SSOA VGE = 15V, TVJ = 125 C, RG = 3 ICM = 200 A (RBSOA) Clamped inductive load @ VCE 600V PC TC = 25 C 460 W G G D C TAB ES TJ -55 ... +150 C TJM 150 C G = Gate C = Collector Tstg -55 ... +150 C E = Emitter TAB = Collector Md Mounting torque (TO-264) 1.13 / 10 Nm/lb.in. FC Mounting force (PLUS247) 20..120 / 4.5..27 N/lb. Features TL Maximum lead temperature for soldering 300 C TSOLD 1.6mm (0.062 in.

Keywords - ALL TRANSISTORS. Principales características

 ixgk64n60b3d1.pdf Design, MOSFET, Power

 ixgk64n60b3d1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgk64n60b3d1.pdf Database, Innovation, IC, Electricity