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ixgr64n60a3.pdf Principales características:

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGR64N60A3 IC110 = 47A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching ISOPLUS247TM (IXGR) Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C 47 A Isolated Tab C E ICM TC = 25 C, 1ms 350 A SSOA VGE= 15V, TVJ = 125 C, RG = 3 ICM = 100 A (RBSOA) Clamped inductive load @ VCE 600V G = Gate E = Emitter PC TC = 25 C 200 W C = Collector TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features FC Mounting Force 20..120/4.5..27 N/lb. Silicon chip on Direct-Copper Bond TL 1.6mm (0.063 in.) from case for 10s 300 C (DCB) substrate Isolated mounting surface TSOLD Plastic body for

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 ixgr64n60a3.pdf Design, MOSFET, Power

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