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ixsh24n60a.pdf Principales características:

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Emitter TAB = Collector IC90 TC = 90 C24 A ICM TC = 25 C, 1ms 96 A Features SSOA VGE = 15V, TJ = 125 C, RG = 10 ICM = 48 A International standard package (RBSOA) Clamped inductive load @0.8 VCES V JEDEC TO-247AD tSC VGE = 15V, VCE = 360V, TJ = 125 C 10 s High frequency IGBT with guaranteed (SCSOA) RG = 82 , non repetitive Short Circuit SOA Capability 2nd generation HDMOSTM process PC TC = 25 C 150 W Low VCE(SAT) TJ -55 ... +150 C - for low on-state cond

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