ixta14n60p ixtq14n60p ixtp14n60p.pdf Principales características:

ixta14n60p_ixtq14n60p_ixtp14n60pixta14n60p_ixtq14n60p_ixtp14n60p

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V G VGS Continuous 30 V S (TAB) VGSM Tranisent 40 V ID25 TC = 25 C14 A TO-220 (IXTP) IDM TC = 25 C, pulse width limited by TJM 42 A IAR TC = 25 C14 A EAR TC = 25 C25 mJ (TAB) G EAS TC = 25 C 750 mJ D S dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns TJ 150 C, RG = 10 TO-3P (IXTQ) PD TC = 25 C 300 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C G TL 1.6 mm (0.062 in.) from case for 10 s 300 C D (TAB) S TSOLD Plastic body for 10 s 260 C Md Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. G = Gate D = Drai

 

Keywords - ALL TRANSISTORS. Principales características

 ixta14n60p ixtq14n60p ixtp14n60p.pdf Design, MOSFET, Power

 ixta14n60p ixtq14n60p ixtp14n60p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixta14n60p ixtq14n60p ixtp14n60p.pdf Database, Innovation, IC, Electricity