ixtk120n20p ixtq120n20p.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixtk120n20p ixtq120n20p.pdf Principales características:

IXTK 120N20P PolarHTTM VDSS = 200 V IXTQ 120N20P Power MOSFET ID25 = 120 A RDS(on) 22 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V G VGS Continuous 20 V D (TAB) S VGSM Transient 30 V ID25 TC = 25 C 120 A TO-3P (IXTQ) ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 300 A IAR TC = 25 C60 A EAR TC = 25 C60 mJ G D (TAB) EAS TC = 25 C 2.0 J S dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns G = Gate D = Drain TJ 175 C, RG = 4 S = Source TAB = Drain PD TC = 25 C 714 W TJ -55 ... +175 C TJM 175 C Features Tstg -55 ... +175 C l International standard packages TL 1.6 mm (0.062 in.) from case for 10 s 300