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ixtk120p20t ixtx120p20t.pdf Principales características:

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS = 1M - 200 V Tab VGSS Continuous 15 V VGSM Transient 25 V PLUS247 (IXTX) ID25 TC = 25 C -120 A IDM TC = 25 C, Pulse Width Limited by TJM - 400 A IA TC = 25 C -100 A EAS TC = 25 C3 J G D Tab S dv/dt IS IDM, VDD VDSS, TJ 150 C 10 V/ns PD TC = 25 C 1040 W G = Gate D = Drain S = Source Tab = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL 1.6mm (0.062 in.) from Case for 10s 300 C Avalanche Rated TSOLD Plastic Body for 10s 2

Keywords - ALL TRANSISTORS. Principales características

 ixtk120p20t ixtx120p20t.pdf Design, MOSFET, Power

 ixtk120p20t ixtx120p20t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixtk120p20t ixtx120p20t.pdf Database, Innovation, IC, Electricity