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mmix4b12n300.pdf Principales características:

Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor VCE(sat) 3.2V C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25 C to 150 C 3000 V Isolated Tab E3E4 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G4 E2C4 VGES Continuous 20 V G2 VGEM Transient 30 V C2 G3 IC25 TC = 25 C 26 A E1C3 G1 IC110 TC = 110 C 11 A C1 ICM TC = 25 C, VGE = 19V, 1ms 98 A 10ms 52 A G = Gate E = Emitter SSOA VGE = 15V, TVJ = 125 C, RG = 20 ICM = 98 A C = Collector (RBSOA) Clamped Inductive Load 1500 V Features PC TC = 25 C 125 W TJ -55 ... +150 C Silicon Chip on Direct-Copper Bond TJM C 150 (DCB) Substrate Isolated Mounting Surface

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 mmix4b12n300.pdf Design, MOSFET, Power

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