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www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25 C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 V CEO Emitter-base voltage V -4 V EBO Collector continuous current I -500 mA C 1) Collector power dissipation P 350 mW C 1) Thermal resistance from junction to ambient R 555 C/W JA 2) Operating junction and storage temperature range T , T -55 150 C j stg ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) j Parameter Symbol Test condition Min Ty

 

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