cjac10th10.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cjac10th10.pdf Principales características:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 8m @10V 100V 100A 10m @4.5V DESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES APPLICATIONS Low RDS(on) High efficiency power supply Low Gate Charge Secondary synchronus rectifier MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAC10TH10 = Part No. Solid dot=Pin1 indicator CJAC 10TH10 XX XX=Date Code 1 2 3 4 S S S G ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I 100 D A Pulsed Drain Current(1) I 300 DM