Todos los transistores

 

ss8050.pdf Principales características:

ss8050ss8050

SS8050 Silicon Epitaxial Planar Transistor FEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation P =2W(T =25 ) C C APPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 6 V EBO Collector Current -Continuous I 1.5 A C Collector Dissipation P 1 W C Junction Temperature T 150 j Storage Temperature T -65 to +150 stg www.jsmsemi.com 1/4 JSMICRO Semiconductor SS8050 Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V I =100 A,I =0 40 - - V (BR)C

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050.pdf Design, MOSFET, Power

 ss8050.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050.pdf Database, Innovation, IC, Electricity

 

 

 


 
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