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2n3906e.pdf Principales características:

SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=-30V, VEB=-3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H 0.50 _ + J 0.13 0.05 Low Saturation Voltage VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. J Low Collector Output Capacitance Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904E. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT ESM VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA PC Collector Power Dissipation 100 mW Marki

Keywords - ALL TRANSISTORS. Principales características

 2n3906e.pdf Design, MOSFET, Power

 2n3906e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906e.pdf Database, Innovation, IC, Electricity