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2n3906u.pdf Principales características:

2n3906u2n3906u

SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=-30V, VEB=-3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+0.1/-0.06 J 1.30 Low Saturation Voltage K 0.00-0.10 L 0.70 VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. H _ + M 0.42 0.10 Low Collector Output Capacitance N 0.10 MIN N N K Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904U. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT USM VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current

 

Keywords - ALL TRANSISTORS. Principales características

 2n3906u.pdf Design, MOSFET, Power

 2n3906u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906u.pdf Database, Innovation, IC, Electricity

 

 
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