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2n5400s.pdf Principales características:

2n5400s2n5400s

SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 VCBO=-130V, VCEO=-120V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 ICBO=-100nA(Max.) @VCB=-100V J 0.13+0.10/-0.05 K 0.00 0.10 Low Saturation Voltage L 0.55 P P VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise NF=8dB (Max.) P 7 M 1. EMITTER MAXIMUM RATING (Ta=25 ) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V SOT-23 VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA IB Base Current -100 mA PC * Collector Power Dissipation 350 mW Tj Junction

 

Keywords - ALL TRANSISTORS. Principales características

 2n5400s.pdf Design, MOSFET, Power

 2n5400s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5400s.pdf Database, Innovation, IC, Electricity

 

 
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