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2n5401s.pdf Principales características:

2n5401s2n5401s

SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS _ FEATURES A 2.93 0.20 + B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 3 D 0.40+0.15/-0.05 VCBO=-160V, VCEO=-150V E 2.40+0.30/-0.20 1 Low Leakage Current. G 1.90 H 0.95 ICBO=-50nA(Max.) @VCB=-120V J 0.13+0.10/-0.05 K 0.00 0.10 Q Low Saturation Voltage L 0.55 P P M 0.20 MIN VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA N 1.00+0.20/-0.10 Low Noise NF=8dB (Max.) P 7 Q 0.1 MAX M 1. EMITTER 2. BASE MAXIMUM RATING (Ta=25 ) 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V SOT-23 VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA IB Base Current -100 mA PC * Collector Power Dissipation 3

 

Keywords - ALL TRANSISTORS. Principales características

 2n5401s.pdf Design, MOSFET, Power

 2n5401s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5401s.pdf Database, Innovation, IC, Electricity

 

 

 


 
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