kgt15n60fda.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

kgt15n60fda.pdf Principales características:

SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 5us(@TC=100 ) Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCES Collector-Emitter Voltage 600 V VGES 20 Gate-Emitter Voltage V 15 A @Tc=25 IC Collector Current 7.5 A @Tc=100 ICM* Pulsed Collector Current 30 A IF Diode Continuous Forward Current @Tc=25 15 A IFM* Diode Maximum Forward Current 45 A 41.6 W @Tc=25 PD Maximum Power Dissipation 17 W @Tc=100 Tj *Repetitive rating Pulse width limited by max. junction temperature 150 Maximum Jun