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2sc3356.pdf Principales características:

2sc33562sc3356

SMD Type Transistors SMD Type NPN Transistors 2SC3356 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1 2 High power gain. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3.0 V Collector current (DC) IC 100 mA Total power dissipation Ptot 200 mW Junction temperature Tj 150 Storage temperature range Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 m

 

Keywords - ALL TRANSISTORS. Principales características

 2sc3356.pdf Design, MOSFET, Power

 2sc3356.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3356.pdf Database, Innovation, IC, Electricity

 

 
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