2sd2212.pdf Principales características:
SMD Type Transistors NPN Transistors 2SD2212 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B R1 R2 1.Base E 2.Collector R1 3.5k R2 300 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 A Collector Current - Pulse ICP 3 0.5 Collector Power Dissipation PC W (Note.1) 2 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note.1 Mounted on a 40 40 0.7mm ceramic substrate Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 50 Collector- emitter breakdown voltage VC
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2sd2212.pdf Design, MOSFET, Power
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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