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2sd882-252.pdf Principales características:

Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5V Collector Current to Continuous IC 3A Collector Dissipation Pc 1.25 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 30 V Emitter-base breakdown volta

Keywords - ALL TRANSISTORS. Principales características

 2sd882-252.pdf Design, MOSFET, Power

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