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hn1a01fu.pdf Principales características:

hn1a01fuhn1a01fu

SMD Type Transistors PNP Transistors HN1A01FU (KN1A01FU ) Features High voltage and high current High hFE hFE = 120 400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -150 mA Base current IB -30 Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB=0 -50 V Emitter - base breakdown voltage VEBO IE= -100 A IC=0 -5 Collector-base cut-off current IC

 

Keywords - ALL TRANSISTORS. Principales características

 hn1a01fu.pdf Design, MOSFET, Power

 hn1a01fu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hn1a01fu.pdf Database, Innovation, IC, Electricity

 

 

 


 
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