kia4n60h.pdf Principales características:

kia4n60hkia4n60h

4.0A600V N-CHANNELMOSFET 4N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features R =2.3 @V =10V DS(ON) GS Lowgate charge (typical 13.5nC) High ruggedness Fast switching capability Avalancheenergy specified Improveddv/dt capability 3. Pinconfiguration Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1 of 6 Rev1.2Dec 2014 4.0A600V N-CHANNELMOSFET 4N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 4. Absolutemaximumratings (T =25 C, unless otherwise specified) C Rating Parameter Symbol TO220 Units TO220F TO251 TO252 TO262 Drain-sourcevoltage V 600 V DSS Gate-sourcevolta

 

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 kia4n60h.pdf Design, MOSFET, Power

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