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2n5401.pdf Principales características:

2n54012n5401

2N5401(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitte

 

Keywords - ALL TRANSISTORS. Principales características

 2n5401.pdf Design, MOSFET, Power

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 2n5401.pdf Database, Innovation, IC, Electricity

 

 

 


 
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